首页> 外国专利> Substrate Dicing Method by Nano Void Array Formation using Femtosecond Pulse Lasers

Substrate Dicing Method by Nano Void Array Formation using Femtosecond Pulse Lasers

机译:飞秒脉冲激光通过纳米空隙阵列形成的基板切割方法

摘要

PURPOSE: A method for cutting for nano-void array forming by femtosecond laser is provided to improve the cutting and processing efficiency of a transparent material by forming nano-void array using femtosecond laser. CONSTITUTION: A method for cutting for nano-void array forming by femtosecond laser comprises next steps. A pole first grade femtosecond laser is condensed to a condensing lens(120) and radiates laser beam to a transparent material or substrate. The plasma defocusing is performed by multi-photon ionization. Self focusing is performed due by Kerr Lens. Nano-Void Array(210) is formed on a substrate and cut. The energy per pulse has the energy value on the substrate in order to become over the threshold energy 0.2uJ for the void formation.
机译:目的:提供一种通过飞秒激光切割形成纳米空隙阵列的方法,以通过使用飞秒激光形成纳米空隙阵列来提高透明材料的切割和加工效率。组成:飞秒激光切割纳米空隙阵列形成的方法包括以下步骤。极级飞秒激光会聚到会聚透镜(120)上,并将激光束辐射到透明材料或基板上。通过多光子电离进行等离子体散焦。自聚焦由Kerr Lens执行。纳米空隙阵列(210)形成在基板上并被切割。每个脉冲的能量在基板上具有能量值,以便超过用于形成空隙的阈值能量0.2uJ。

著录项

  • 公开/公告号KR101181719B1

    专利类型

  • 公开/公告日2012-09-19

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20100059233

  • 申请日2010-06-22

  • 分类号B23K26/36;H01S3/10;H01L21/304;C03B33/09;

  • 国家 KR

  • 入库时间 2022-08-21 17:07:31

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