METHOD FOR MANUFACTURING A CI(G)S BASED THIN FILM INCLUDING A Cu-Se THIN FILM USING Cu-Se BINARY NANO PARTICLE FLUX AND THE CI(G)S BASED THIN FILM MANUFACTURED BY THE SAME

摘要

PURPOSE: A method for manufacturing a CI(G)S based thin film including a Cu-Se thin film using Cu-Se binary nano particle flux and the CI(G)S based thin film manufactured by the same are provided to obtain a dense structure by filling a gap between particles.;CONSTITUTION: Cu-Se binary nano particles an In nano particles are made. Slurry including Cu-Se binary nano particles is made by mixing the Cu-Se binary nano particles, solvents, and a binder. Slurry including In nano particles is made by mixing the In nano particles, the solvents, and the binder. A thin film is formed by alternatively coating a substrate with the slurry including Cu-Se binary nano particles and the slurry including In nano particles. The thin film is thermally processed for 60 to 90 minutes at substrate temperatures of 520 to 550 degrees centigrade by supplying selenium steam.;COPYRIGHT KIPO 2013;[Reference numerals] (AA) Selenization thermal process; (BB) Cu-Se flux