MAGNETIC, tellurium chalcogenide manganese giant magnetoresistance

摘要

FIELD: chemistry.;SUBSTANCE: invention can be used in microelectronics. The magnetic tellurium-containing manganese chalcogenide with giant magnetoresistance MnSe_1-xTe_x, in which X=0.1; 0.2, 0.4, contains manganese, selenium and tellurium in the following ratio, wt %: manganese 50, 50, 50; selenium 45, 40, 30; tellurium 5, 10, 20.;EFFECT: invention enables to design microelectronic components based on tellurium-containing manganese chalcogenide, which are resistant to radiation and capable of operating in extreme conditions, and reduce costs of producing materials.;3 dwg, 2 tbl