首页> 外国专利> SOLUTION FOR LASER-INDUCED METALLIZATION OF DIELECTRICS AND METHOD OF LASER-INDUCED METALLIZATION OF DIELECTRICS WITH ITS USE

SOLUTION FOR LASER-INDUCED METALLIZATION OF DIELECTRICS AND METHOD OF LASER-INDUCED METALLIZATION OF DIELECTRICS WITH ITS USE

机译:激光诱导介电金属化的解决方案及激光诱导介电金属化的方法及其应用

摘要

FIELD: electricity.;SUBSTANCE: method involves preparation of copper plating solution, irradiation of solution by means of argon laser beam focused at 5-10 mcm spot at dielectric-solution boundary line, with simultaneous movement of mechanised table with dielectric plate at the speed of 0.01 mm/s at power of laser radiation, which penetrates into the solution of 100 mW to 450 mW. As copper plating solution there used is solution containing 0.01 M CuCl2, 0.011 M Trilon B, 0.05 M NaOH, 0.05 M - 0.1 M HCHO, 0.003 M parabenzokinone (C5H4O2), which is taken in the quantity of not less than 0.1 ml/cm2. Irradiation is performed at temperature of 15-25°C; the above solution is used for metallisation of dielectric plate located vertically to direction of laser beam.;EFFECT: invention allows metallising dielectric surface without using any phototemplate and external current sources at room temperature so that continuous copper tracks can be obtained, which correspond to boards of accuracy class equal to 5 and higher.;2 cl, 4 dwg
机译:领域:电;物质:该方法包括制备镀铜溶液,通过在介电溶液边界线上聚焦在5-10 mcm点处的氩激光束照射溶液,同时使机械化工作台与介电板同时移动功率为0.01 mm / s的激光辐射功率,可穿透100 mW至450 mW的溶液。作为镀铜溶液,使用的溶液包含0.01 M CuCl 2 ,0.011 M Trilon B,0.05 M NaOH,0.05 M-0.1 M HCHO,0.003 M对苯甲酮(C 5 H 4 O 2 ),其取量不少于0.1 ml / cm 2 。辐照在15-25°C的温度下进行;上述解决方案用于垂直于激光束方向定位的电介质板的金属化;效果:本发明允许在不使用任何光模板和室温下在室温下对电介质表面进行金属化,从而可以获得与板相对应的连续铜迹线精度等级等于或高于5的;; 2 cl,4 dwg

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号