Semiconducting component with increased breakdown voltage in edge region has shorter distance from edge cell trench to that of adjacent cell than between trenches of cells in cell field

摘要

The device has a cell field with identical cells and an edge cell(s). Each cell has a first connection zone, a channel zone and a control electrode(s) in a trench. The individual cells' trenches are arranged at intervals. The edge cell has a field plate in a trench isolated from the semiconducting body by an insulating coating. The distance from the edge cell trench to that of the adjacent cell is less than between trenches of cell field cells. The device has a cell field with several identical transistor cells (Z1-Z3) and at least one edge cell (RZ). Each cell has a first connection zone, a channel zone (20) and at least one control electrode (42) in a trench (40), whereby the trenches of the individual cells are arranged at intervals in the horizontal direction. The edge cell has a field plate (52) in a trench (50) and isolated from the semiconducting body (100) by an insulating coating (54). The distance from the edge cell trench to that of the adjacent cell is less than the distance between trenches of cells in the cell field.