Simultaneous double-side grinding providing method for semiconductor wafer, involves machining semiconductor wafers in material-removing fashion between rotating upper working disk and lower working disk

摘要

The method involves machining semiconductor wafers (15) in material-removing fashion between two rotating upper and lower working disks (1, 4), where the working disks comprises working layers (11, 12) containing bonded abrasive. The temperature in the working gap (30) is kept constant during the machining, where each semiconductor wafer lies such that the wafer is freely moveable in a cutout of one of a set of carriers caused to rotate by a rolling apparatus. An independent claim is also included for a semiconductor wafer comprising an isotropic ground pattern.