Producing monocrystalline semiconductor material useful e.g. in photovoltaics, comprises providing semiconductor material starting material, transferring it into heating zone and sinking melt into heating zone or lifting heating zone

摘要

Producing monocrystalline semiconductor material (104), preferably monocrystalline silicon, comprises: providing a starting material made of semiconductor material; transferring the starting material into a heating zone, in which the starting material is fed into a melt made of the semiconductor material; and sinking the melt into the heating zone and/or lifting the heating zone, so that a solidification front is formed at the lower end of the melt, along which the semiconductor substance crystallizes in desired structure. Producing monocrystalline semiconductor material (104), preferably monocrystalline silicon, comprises: providing a starting material made of semiconductor material; transferring the starting material into a heating zone, in which the starting material is fed into a melt made of the semiconductor material; and sinking the melt into the heating zone and/or lifting the heating zone, so that a solidification front is formed at the lower end of the melt, along which the semiconductor substance crystallizes in desired structure. The starting material is prepared from the semiconductor material in liquid form and is fed into the melt in the liquid state. An independent claim is also included for an arrangement (100) for producing the monocrystalline semiconductor material, preferably monocrystalline silicon, comprising a source for a liquid semiconductor material serving as the starting material, a heating medium for producing and/or adjusting a melt made of the semiconductor material, and a device for controlled feeding of the liquid semiconductor material serving as the starting material, into the melt.