首页> 外国专利> Method for manufacturing coaxial silicon dioxide nano-wire, that is utilized as e.g. fumed silica, for e.g. paint, involves heating solid containing side with substrate, and introducing required heat energy by concentrated solar radiation

Method for manufacturing coaxial silicon dioxide nano-wire, that is utilized as e.g. fumed silica, for e.g. paint, involves heating solid containing side with substrate, and introducing required heat energy by concentrated solar radiation

机译:用于制造同轴二氧化硅纳米线的方法,其被用作例如。气相法二氧化硅,例如油漆,包括加热包含固体的基材和基材,并通过集中的太阳辐射引入所需的热能

摘要

The method involves heating a solid containing a side with a catalyst-coated substrate in a form of a wafer at a temperature of 600 to 1500 degree celsius, where molecules/atoms are separated from the substrate during a gaseous phase and are deposited on a catalyst in a form of nano-wire. Required heat energy is introduced by concentrated solar radiation. The substrate is coated with an iron/nickel-containing catalyst i.e. sub-stoichiometric nickel ferrites. Gaseous raw materials react on the catalyst and reaction products are deposited on the catalyst in the form of nano-wire. The catalyst-coated substrate is selected from a group consisting of silicon-infiltrated silicon carbide, pellets, parallel channel monolith, and foam structure.
机译:该方法包括在600至1500摄氏度的温度下以晶片的形式加热含有侧面的固体和催化剂涂覆的基底,该晶片以晶片的形式存在,其中在气相期间分子/原子与基底分离,并沉积在催化剂上以纳米线的形式。所需的热能通过集中的太阳辐射引入。基材涂覆有含铁/镍的催化剂,即亚化学计量的镍铁氧体。气态原料在催化剂上反应,反应产物以纳米线的形式沉积在催化剂上。涂覆有催化剂的基材选自硅渗透的碳化硅,粒料,平行通道整料和泡沫结构。

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