Deformation technology in three-dimensional transistors on the basis of a deformed channel half conductor material

摘要

In three-dimensional transistor configurations, for example in finfet ''s, is at least one surface of the half conductor web is provided with a deformed semiconductor material, which thus a pronounced uniaxial deformation component along the direction of current flow has. The deformed semiconductor material 1 is provided in a suitable process step, for example, before the actual structuring of the half conductor webs and / or after the patterning of the half conductor webs, whereby a better performance and a higher degree of flexibility in the adjustment of the entire properties of a three-dimensional transistors are.