Restoration of surface properties of sensitive dielectrics having a small ε in micro structure components under application of an in - situ - surface modification

摘要

Structuring induced damage to sensitive of dielectric materials with a small ε in semiconductor components are eliminated again to a certain extent on the basis of a surface treatment, which from the action of the ambient atmosphere is carried out on the component. For this purpose, the unsaturated silicon bonds of the silicon oxide based of dielectric material with a small ε in a closed process environment saturated, as a result of which better process conditions for the subsequent applying a suitable repair chemie is to be created.