Slight diffused drain - and source regions - in cmos transistors for applications with high efficiency and low power

摘要

Drain - and source regions are at least partly by means of an in - situ - doped epitaxially grown on semiconductor material for complementary transistors in complex semiconductor components is produced which, for high performance are designed with low power consumption. To this end, recesses are - to - situ doped semiconductor material is filled up again, which in some illustrative embodiments also for a desired deformation in the channel regions of the complementary transistors provides.