Device useful for depositing material layer derived from process gas on substrate disc, comprises reactor chamber, which is bound by upper cover, lower cover and side wall, susceptor, preheat ring, chuck, and spacer

摘要

Device for depositing a material layer derived from a process gas on a substrate disc (4), comprises a reactor chamber, which is bound by an upper cover (1), a lower cover (2) and a side wall (3); a susceptor (5) for holding the substrate disc during the deposition of the material layer; a preheat ring, which surrounds the susceptor; a chuck on which the preheat ring is supported in a centered position, in which a gap of uniform width is provided between the preheat ring and the susceptor; and a spacer between the chuck and the preheat ring. Device for depositing a material layer derived from a process gas on a substrate disc (4), comprises a reactor chamber, which is bound by an upper cover and a lower cover and a side wall (3); a susceptor (5) for holding the substrate disc during the deposition of the material layer; a preheat ring, which surrounds the susceptor; a chuck on which the preheat ring is supported in a centered position, in which a gap of uniform width is provided between the preheat ring and the susceptor; and a spacer between the chuck and the preheat ring, which holds the preheat ring in the centered position and produces a distance (delta ) between the preheat ring and the chuck. An INDEPENDENT CLAIM is also included for depositing the material layer derived from the process gas on the substrate disc, comprising passing the process gas over the preheat ring to the substrate disc, which is held on the susceptor in the device.