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Mirror for collector of extreme UV light source used in projection exposure system, has layer arrangement whose average sputtering rate with respect to particle energies of tin particle is set to specific range at specific time period
Mirror for collector of extreme UV light source used in projection exposure system, has layer arrangement whose average sputtering rate with respect to particle energies of tin particle is set to specific range at specific time period
The mirror (112) has substrate and layer arrangement having layer of sub-systems. The sub-system has high-refractive index layer and low refractive layer with tin (Sn) particles. The average sputtering rate of layer arrangement with Sn particles having particle energies of 100 eV is less than 0.024, or particle energy of 1000 eV is less than 0.65 or particle energies of 10 keV is less than 3 at specific period. The sub-system is provided with sputter-restraining interlayer made of boron carbide, carbon and silicon carbide.
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