Method for preparing semiconductor structure i.e. micro-electromechanical pressure sensor, involves removing portion of main surface of substrate opposite to other main surface to depth of trenches

摘要

The method involves forming a sacrificial structure (110) by etching a set of trenches (112) on a main surface (103) of a complementary metal oxide semiconductor substrate (102) for forming a pattern on the substrate. The trenches are covered with a covering material by an epitaxy process or Venetian process to define cavities in the substrate. A portion of another main surface (104) of the substrate opposite to the former main surface is removed to a depth (d) of the trenches. The sacrificial structure is etched from the latter main surface of the substrate. A portion of the substrate is filled with filling material that is selected from a group comprising insulator material, covering layer material, silicon oxide and silicon nitride. An independent claim is also included for a semiconductor structure comprising a side wall.