xmr - sensors having a pronounced form anisotropy

摘要

Exemplary embodiments relate to xmr - sensors, which have a very pronounced form anisotropy. Exemplary embodiments relate also to novel structuring processes of xmr -, in order to achieve very pronounced the form of anisotropies, without the relevant for the performance of chemically to influence the magnetic field sensitive layer system and at the same time a comparatively uniform structural widths over a wafer to, in exemplary embodiments at up to about 100 nm. Exemplary embodiments, it is also possible to provide xmr - stack, the side walls of the for the performance of relevant free - layer - system, which are smooth and / or a defined lateral geometry, which is important, in order to achieve a homogeneous magnetic behavior, to achieve by means of the wafer.