首页> 外国专利> Semiconductor device for power converter, has protective element made of polar resin material that is arranged in region surrounding semiconductor chip at main surface of heat spreader

Semiconductor device for power converter, has protective element made of polar resin material that is arranged in region surrounding semiconductor chip at main surface of heat spreader

机译:用于功率转换器的半导体装置,具有由极性树脂材料制成的保护元件,该保护元件布置在散热器主表面上围绕半导体芯片的区域中

摘要

The semiconductor device (100) has semiconductor chip (4) that is installed on main surface of a heat spreader (2) through soldering layer (3). The semiconductor chip and main surface of the heat spreader are sealed with a molding resin (5). A protective element (1) is arranged in the region surrounding semiconductor chip at the main surface of the heat spreader. The protective element is made of polar resin material with flexural strength and glass transition temperature higher than that molding resin.
机译:半导体装置(100)具有通过焊接层(3)安装在散热器(2)的主面上的半导体芯片(4)。半导体芯片和散热器的主表面被模制树脂(5)密封。在散热器的主表面上围绕半导体芯片的区域中布置有保护元件(1)。保护元件由极性树脂材料制成,其抗弯强度和玻璃化转变温度高于模塑树脂。

著录项

  • 公开/公告号DE102011088442A1

    专利类型

  • 公开/公告日2012-07-19

    原文格式PDF

  • 申请/专利权人 MITSUBISHI ELECTRIC CORPORATION;

    申请/专利号DE20111088442

  • 发明设计人 YAMAGUCHI YOSHIHIRO;UEDA TETSUYA;

    申请日2011-12-13

  • 分类号H01L23/16;H01L23/36;H01L23/31;

  • 国家 DE

  • 入库时间 2022-08-21 17:04:53

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