Method for processing errors in e.g. electrically EPROM, of non-volatile memory device, involves reading non-erroneous bits of word during ulterior addressing of memory by reading relocated bit

摘要

The method involves reading a word in a non-volatile memory during addressing of the memory, and detecting presence of a bit of the word in the memory by an error correction code. A part of another word is written in the memory with an address. The information with the address and a relocated bit is written in an auxiliary memory unit, where the relocated bit is located in an auxiliary memory location of the unit and includes a required logic value. Non-erroneous bits of another word are read during the ulterior addressing of the memory (50) by reading the relocated bit (52). An independent claim is also included for a non-volatile memory device comprising a non-volatile memory.