Deposition of semiconductor material for e.g. electronic device, involves decomposing gas comprising III group element, flowing precursor through primary gas column, flowing V group element precursor, moving substrate and exposing

摘要

A gas comprising at least one III group element is decomposed to generate III group element precursor. The precursor is made to flow through a primary gas column of several substantially aligned gas columns (108). A V group element precursor is made to flow through a secondary gas column of several substantially aligned gas columns. Movement of a substrate (112) is established relative to several substantially aligned gas columns. A surface of the substrate is sequentially exposed to the III group precursor and the V group element precursor to form a III-V semiconductor material. An independent claim is included for deposition system.