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Surface treated substrates for top gate organic thin film transistors
Surface treated substrates for top gate organic thin film transistors
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机译:顶栅有机薄膜晶体管的表面处理衬底
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摘要
A method of forming a top gate transistor comprising the steps of providing a substrate carrying source and drain electrodes defining a channel region therebetween; treating at least part of the surface of the channel region to reduce its polarity; and depositing a semiconductor layer in the channel.
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