首页> 外国专利> METHOD FOR REUTILIZING SILICON OFFCUT, RAW MATERIAL SILICON, POLYSILICON MATERIAL, AND METHOD FOR MANUFACTURING POLYSILICON SOLAR CELL

METHOD FOR REUTILIZING SILICON OFFCUT, RAW MATERIAL SILICON, POLYSILICON MATERIAL, AND METHOD FOR MANUFACTURING POLYSILICON SOLAR CELL

机译:硅切口,原始材料硅,多晶硅材料的再利用方法以及制造多晶硅太阳能电池的方法

摘要

PROBLEM TO BE SOLVED: To provide a method for reutilizing silicon offcuts at a low cost.;SOLUTION: The method for reutilizing silicon offcuts includes: a cutting step of cutting the upper surface, the side surface and the bottom surface of a polysilicon ingot to obtain a polysilicon block, and to obtain upper surface offcuts, side surface offcuts and bottom surface offcuts; and a refining step of refining the upper surface offcuts into refined upper surface offcuts by the step different from the bottom surface offcuts, wherein the refined upper surface offcuts and the bottom surface offcuts are used as a raw material silicon.;COPYRIGHT: (C)2013,JPO&INPIT
机译:解决的问题:提供一种低成本地再利用硅屑的方法;解决方案:再利用硅屑的方法包括:切割步骤,将多晶硅锭的上表面,侧面和底面切割为获得多晶硅块,并获得上表面切口,侧表面切口和底表面切口;精制工序是通过与底面残渣不同的工序将上表面残渣精加工为精制的上表面残渣的工序,其中,将精制的上表面残渣和底面残渣用作原料硅。版权所有:(C) 2013,日本特许厅

著录项

  • 公开/公告号JP2013116836A

    专利类型

  • 公开/公告日2013-06-13

    原文格式PDF

  • 申请/专利权人 SHARP CORP;

    申请/专利号JP20110264825

  • 发明设计人 YAMANE SATOSHI;OISHI RYUICHI;

    申请日2011-12-02

  • 分类号C01B33/037;C01B33/02;H01L31/04;

  • 国家 JP

  • 入库时间 2022-08-21 17:03:07

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