METHOD AND APPARATUS FOR REFORMING POLYSILICON LAYER, METHOD OF MANUFACTURING POLYSILICON SOLAR CELL, AND METHOD OF MANUFACTURING POLYSILICON TYPE THIN-FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a technique for reducing an unbonding hand in silicon on a substrate made of polysilicon or on a polysilicon layer formed on the substrate.;SOLUTION: In a reforming method of a polysilicon layer, the polysilicon layer is reformed by hydrogen. The reforming method has a process for arranging the polysilicon layer on a substrate arrangement electrode in vacuum, for arranging a counter electrode by separation nearly in parallel with the substrate arrangement electrode, for introducing gas including hydrogen toward the polysilicon layer between the substrate arrangement electrode and the counter electrode, for applying a low-frequency AC voltage at not less than 100 kHz and not more than 2,000 kHz to the substrate arrangement electrode, and for reforming the polysilicon layer by hydrogen by glow discharge generated between the substrate arrangement and counter electrodes.;COPYRIGHT: (C)2009,JPO&INPIT