MELT COMPOSITION-CONTROLLED UNIDIRECTIONALLY SOLIDIFYING CRYSTAL GROWTH APPARATUS AND METHOD

摘要

PROBLEM TO BE SOLVED: To provide a crystal growth apparatus and method capable of securely manufacturing a langasite single crystal or a langatate single crystal.;SOLUTION: The method includes using a langasite single crystal as a seed crystal 2, La₃Ga_5+xSi_1-xO₁₄ (0x≤0.2) as an initial raw material, La₃Ga₅SiO₁₄ as an additional raw material 11, and La₃Ga_5-xSi_1+xO₁₄ (0≤x≤0.2) as a second additional raw material, a step of adding the additional raw material 11 continuously, intermittently or at once at the completion of the melting of the initial raw material or right before or right after the melting completion to the melt in a crucible, and a step of adding the second additional raw material continuously or intermittently in the melt in the crucible and stopping the addition of the second additional raw material at the time point when the composition of the melt reaches La₃Ga₅SiO₁₄ in a crystal growth completion step.;COPYRIGHT: (C)2013,JPO&INPIT