LINE-TUNNELING TUNNEL FIELD-EFFECT TRANSISTOR (TFET) AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a tunnel field effect transistor comprising a source region, a drain region, and a channel region forming a source-channel interface with the source region and a drain-channel interface with the drain region.;SOLUTION: A source region comprises a first source sub-region 20 and a second source sub-region 25 close to a source-channel interface 201, and an interface is defined between the first source sub-region and the second source sub-region. The second peak concentration is substantially higher than the maximum doping level of the first doping profile close to the interface between the first source sub-region and the second source sub-region. A TFET further comprises: a gate electrode 24 which covers a part of the source region along the longitudinal direction L thereof such that there is no coverage by the gate electrode 24 of a channel region 21 nor of a drain region 22; and a gate dielectric 29 along the longitudinal direction L between the gate electrode and the source region.;COPYRIGHT: (C)2013,JPO&INPIT