FERROMAGNETIC TUNNEL JUNCTION AND MAGNETORESISTANCE EFFECT ELEMENT AND SPINTRONICS DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To achieve a high TMR value that is not in the prior by using a tunnel barrier layer other than an MgO barrier, and to change the lattice constant continuously by composition adjustment of constituent elements.;SOLUTION: A ferromagnetic tunnel junction consisting of a nonmagnetic material having a cubic structure of lattice constant equal to one half that of a spinel structure is discovered by disordering the atomic arrangement of spinel structure in a tunnel barrier layer. A magnetoresistance effect element and a spintronics device utilizing these ferromagnetic tunnel junctions are provided.;COPYRIGHT: (C)2013,JPO&INPIT