首页> 外国专利> On the seed crystal substrate of the cubic it possesses the surface which restricts the field where it becomes origin of production mannered

On the seed crystal substrate of the cubic it possesses the surface which restricts the field where it becomes origin of production mannered

机译:在立方体的晶种衬底上,它具有限制表面的表面,使其成为合理的生产起点

摘要

PROBLEM TO BE SOLVED: To provide a cubic crystal-type nitride semiconductor wafer which yields a green light emission device having a practical light emission efficiency, a method for manufacturing the same, and a method for manufacturing a free-standing substrate of the cubic crystal-type nitride semiconductor.;SOLUTION: The surface of seed crystal substrate 1 of cubic crystals is covered with a material on which a nitride semiconductor 2 hardly grow and overlaid with mask 3 having openings 4 which expose the surface of the seed crystal substrate 1 in an orderly or random manner. The nitride semiconductor 2 grows from the openings 4 of the mask 3. The nitride semiconductor 2 in the form of a continuous film locally contacting with the seed crystal substrate 1 is formed.;COPYRIGHT: (C)2011,JPO&INPIT
机译:解决的问题:提供一种立方晶体型氮化物半导体晶片,其产生具有实用的发光效率的绿色发光器件,其制造方法以及制造该立方晶体的自支撑衬底的方法。型氮化物半导体;解决方案:立方晶体的籽晶衬底1的表面覆盖有氮化物半导体2几乎不生长的材料,并覆盖有具有开口4的掩模3,该开口4暴露出籽晶衬底1的表面。有序或随机的方式。氮化物半导体2从掩模3的开口4生长。形成与籽晶衬底1局部接触的连续膜形式的氮化物半导体2。版权所有:(C)2011,JPO&INPIT

著录项

  • 公开/公告号JP5206985B2

    专利类型

  • 公开/公告日2013-06-12

    原文格式PDF

  • 申请/专利权人 日立電線株式会社;

    申请/专利号JP20090128409

  • 发明设计人 藤倉 序章;

    申请日2009-05-28

  • 分类号C30B29/38;C30B25/18;H01L21/205;

  • 国家 JP

  • 入库时间 2022-08-21 17:00:31

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号