PLASMA CVD APPARATUS AND SUBSTRATE HEATING AND HOLDING BASE, AND METHOD FOR PRODUCING CARBON NANOTUBE

摘要

PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus with which growth speed of a carbon nanotube can be heightened, and a method for producing a carbon nanotube.;SOLUTION: A plasma CVD apparatus has: a vacuum chamber; a substrate holding means arranged in the vacuum chamber; a raw material gas introducing means to introduce a raw material gas into the vacuum chamber; and a plasma generating means to generate plasma in the vacuum chamber, wherein the side face of the plasma generating means is covered with a side face shielding member extending to the substrate holding means side and controlling outflow of plasma, and an end face shielding member controlling the outflow of plasma and having holes is provided on the substrate holding means side of the plasma generating means, and the side face shielding member and the end face shielding member are connected with each other. In a method for producing a carbon nanotube, the carbon nanotube is formed on the surface of a substrate arranged on the substrate holding means while controlling the outflow of plasma to the substrate holding means side and to the side face side of the plasma generating device.;COPYRIGHT: (C)2013,JPO&INPIT