首页> 外国专利> Semiconductors based on substituted 1 benzothieno 3,2-b 1 -benzothiophene

Semiconductors based on substituted 1 benzothieno 3,2-b 1 -benzothiophene

机译:基于取代的[1]苯并噻吩并[3,2-b] [1]-苯并噻吩的半导体

摘要

The present invention relates to compounds of the general formula (I) wherein Z corresponds a to - a C1-C22-alkyl radical substituted by halogen, phosphonic acid or phosphonic acid ester groups -P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups -SO3H, halosilyl radicals -SiHalnR23-n(R2=C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals -Si(OR3)3 (R3=C1-C18-alkyl), - a C5-C12-cycloalkyl radical substituted by halogen, phosphonic acid or phosphonic acid ester groups-P(O) (OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups -SO3H, halosilyl radicals -SiHal-nR23-n(R2=C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals -Si(OR3)3 (R3=C1-C18-alkyl), - a C6-C14-aryl radical or heteroaryl radical from the group of the thienyl, pyrryl, furyl or pyridyl radicals substituted by halogen, phosphonic acid or phosphonic acid ester groups -P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups -SO3H, halosilyl radicals -SiHalnR23-n (R2=C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals -Si(OR3)3 (R3=C1-C18-alkyl), or - a C7-C30-aralkyl radical optionally substituted by halogen, phosphonic acid or phosphonic acid ester groups -P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups -SO3H, halosilyl radicals -SiHalnR23-n (R2=C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals -Si(OR3)3 (R3=C1-C18-alkyl) or a trialkylsilyl radical R5R6R7Si, in which R5, R6, R7 independently of each other are identical or different C1-C18-alkyl radicals. The present invention also relates to a semiconductor layer, an electronic component, a process for the production of an electronic component, the electronic component obtainable by this process and the use of compounds of the general formula (I).
机译:本发明涉及通式(I)的化合物,其中Z对应于-被卤素,膦酸或膦酸酯基团-P(O)(OR1)2取代的C1-C22-烷基(其中基团R 1可以相同或不同,并且对应于氢原子或C1-C12烷基),磺酸基团-SO3H,卤代甲硅烷基基团-SiHalnR23-n(R2 = C1-C18-烷基,n = 1-3的整数) ,巯基或三烷氧基甲硅烷基基团-Si(OR3)3(R3 = C1-C18-烷基),-被卤素,膦酸或膦酸酯基团取代的C5-C12-环烷基-P(O)(OR1)2 (其中基团R1可以相同或不同并且对应于氢原子或C1-C12-烷基),磺酸基团-SO3H,卤代甲硅烷基基团-SiHal-nR23-n(R2 = C1-C18-烷基,n = an 1-3),巯基或三烷氧基甲硅烷基-Si(OR3)3(R3 = C1-C18-烷基),-噻吩基,吡咯基,呋喃基或噻吩基中的C6-C14-芳基或杂芳基吡啶基取代基被卤素,膦酸或膦酸酯基团-P(O)(OR1)2(其中基团R1可以相同或不同并且对应于氢原子或C1-C12-烷基)修饰的磺酸基团-SO3H,卤代甲硅烷基-SiHalnR23-n(R2 = C1-C18-烷基,n = 1至3的整数),巯基或三烷氧基甲硅烷基-Si(OR3)3(R3 = C1-C18-烷基),或-C7 -C 30芳烷基,其任选地被卤素,膦酸或膦酸酯基团-P(O)(OR1)2取代(其中基团R 1可以相同或不同,并且对应于氢原子或C 1 -C 12烷基),磺酸基-SO3H,卤代甲硅烷基-SiHalnR23-n(R2 = C1-C18-烷基,n = 1至3的整数),巯基或三烷氧基甲硅烷基-Si(OR3)3(R3 = C1-C18-烷基)或三烷基甲硅烷基R5R6R7Si,其中R5,R6,R7彼此独立地是相同或不同的C1-C18-烷基。本发明还涉及半导体层,电子部件,电子部件的制造方法,可通过该方法获得的电子部件以及使用通式(I)的化合物。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号