VAPOR DEPOSITION METHOD OF AlGaN AND THICK FILM SUBSTRATE OF AlGaN CRYSTAL PRODUCED BY THE METHOD

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial growth method in which an Al_xGa_1-xN crystal having a desired composition ratio x can be grown on a sapphire substrate or a Si substrate by an HVPE (Hydride Vapor Phase Epitaxy) method.;SOLUTION: An Al_xGa_1-xN is crystal-grown by the HVPE method using an aluminum raw material, a gallium raw material, an ammonia raw material and a carrier gas. At this time, the carrier gas is composed of an inert gas and hydrogen, and the hydrogen partial pressure is set in the range of ≥0 and 0.1. Consequently, the relationship between the supply ratio of the raw materials and the composition ratio of the grown crystal becomes linear, and the controllability of the crystal composition is improved.;COPYRIGHT: (C)2013,JPO&INPIT