METHOD FOR PROTECTING SILICON OR SILICON CARBIDE ELECTRODE SURFACE FROM MORPHOLOGICAL MODIFICATION DURING PLASMA ETCH PROCESSING

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a protective polymeric coating on a silicon or silicon-carbide electrode of a plasma processing chamber.;SOLUTION: The polymeric coating provides protection to the underlying surface of the electrode with respect to exposure to constituents of plasma and gaseous reactants. The method can be performed during a process of cleaning the chamber 102, or during a process for etching a semiconductor substrate 10 in the chamber 102.;COPYRIGHT: (C)2013,JPO&INPIT