Semiconductor device quality simulation device, simulation method and program

摘要

P To provide a device simulation apparatus and a device simulation method and a PROGRAM that accurately analyze electric characteristics of a Schottky source/drain MOSFET at a high speed by employing the effect of quantum-mechanical tunneling through a Schottky barrier for a device simulator based ON a classical and a semiclassical transport equation. PSOLUTION: Tunneling state density by the quantum-mechanical tunneling effect through a Schottky barrier potential of the Schottky source/drain MOSFET is calculated. Total carrier density is calculated from all-state density calculated from classical state density of the Schottky barrier potential and the tunneling state density is calculated and compared with the classical carrier density calculated from the classical state density. The classical and semiclassical transport equations are solved using a corrected Schottky barrier potential obtained by varying the Schottky barrier potential so that the classical carrier density and all-carrier density become equal to each other and electric characteristics of the MOSFET are simulated. PCOPYRIGHT: (C)2010 and JPO& INPIT