PROCESSING METHOD OF BASE MATERIAL, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR TEMPORARY FIXTURE

摘要

PROBLEM TO BE SOLVED: To provide a processing method of a base material which prevents the permeability of infrared rays from deteriorating due to temperature rise of a support medium and efficiently peels the base material from the support medium in a peeling process of the base material using the infrared rays.;SOLUTION: A processing method of a base material includes the steps of: (1) temporarily fixing a support medium, formed by a base material and a silicon wafer, through a temporary fixing material having a photothermal conversion layer; (2) processing the base material; (3) radiating infrared rays to the temporary fixing material from the support medium side without focusing on a surface opposite to a contact surface of the support medium, contacting with the temporary fixing material; and (4) peeling the base material from the support medium.;COPYRIGHT: (C)2013,JPO&INPIT