A method for identifying the lightly doped region of one set of heavily doped regions of a set in a silicon substrate

摘要

Identifying method is disclosed from the lightly doped region of one set of high concentration doped region of a pair on a silicon substrate. The method includes providing a silicon substrate, the silicon substrate is formed in the area of ​​highly doped and a set of lightly doped regions of the pair. The method further includes that illuminating the silicon substrate with electromagnetic radiation source, the electromagnetic radiation source transmits light of wavelengths greater than about 1100nm. Lightly doped regions of a set, and includes also be measured by a sensor wavelength absorption of the heavily doped regions of a set, for any wavelength above about 1100nm, the method, the wavelength of the lightly doped region The percentage of absorption is well below the absorption percentage than the wavelength of the heavily doped region.