Etching device, my chroma scene production mannered

摘要

PROBLEM TO BE SOLVED: To provide a technique for performing high-speed etching by a radical.;SOLUTION: The inside of a vacuum tank 11 is sectioned by a filter 30a into a radical generating chamber 3 and an etching chamber 4, and double domes are protruded into the radical generating chamber 3; and an etching gas containing a reducing gas and an oxidizing gas is introduced into the gap 27 of the double domes and a microwave is radiated from an antenna 24 to generate plasma, thereby radiating a generated radical into the radical generating chamber 3 from a discharge hole 28. The radical passes through small holes 32a of the filter 30a to move to the etching chamber 4, and removes the sacrificial layer of an object 22 to be etched by etching. Plasma of the reducing gas is generated on the surface of the object 22 to be etched, and oxide on the sacrificial layer formed by the radical of the oxidizing gas is reduced and removed to perform high-speed etching.;COPYRIGHT: (C)2010,JPO&INPIT