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Method of producing a variety of isolation regions and / or mixtures laminate structure having a localized vertical conductive region

机译:产生具有局部垂直导电区域的各种隔离区域和/或混合物层压结构的方法

摘要

The method involves forming, across a mask (31), in a semiconductor substrate (30), an insulating zone (36) made up of an insulating material, up to a level of a lower surface (35) of the mask, in a controlled manner before/during removal of the mask. The insulating zone is formed by controlled growth of the material, up to the level of the lower surface of the mask. An independent claim is also included for a semiconductor device.
机译:该方法涉及在半导体衬底(30)中跨过掩模(31)形成由绝缘材料制成的绝缘区(36),该绝缘区直至掩模的下表面(35)的高度。在移除面罩之前/期间以受控方式进行操作。绝缘区是通过材料的受控生长而形成的,直至掩模的下表面。对于半导体器件也包括独立权利要求。

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