After applying the production mannered

摘要

PROBLEM TO BE SOLVED: To provide a novel method of manufacturing metal film capable of forming metal film suitable as electrically conductive film having a low specific resistance.;SOLUTION: In the method of manufacturing the metal film, the substrate is baked after metal nano fine particles dispersed substance is applied to a substrate, in reducing atmosphere such as hydrogen gas at a pressure higher than one atmospheric pressure, thereby forming the metal film. Baking is preferably carried out at temperature of 50 to 200°C. Conventionally, reduction at low temperature has been difficult. Therefore formed metal film tends to have a resistance of high value. The method provides a technology that overcomes the difficulty of reduction at low temperature.;COPYRIGHT: (C)2007,JPO&INPIT