首页> 外国专利> Being the oxidation iridium powder which is used as the oxidation iridium powder and the electric conduction powder of the paste for thick film resistor

Being the oxidation iridium powder which is used as the oxidation iridium powder and the electric conduction powder of the paste for thick film resistor

机译:是用作厚膜电阻用糊剂的氧化铱粉末和导电粉末的氧化铱粉末

摘要

PROBLEM TO BE SOLVED: To provide an iridium oxide powder having an excellent dispersibility in a paste and being capable of forming a resistor having excellent electric characteristics when a paste is obtained by using the iridium oxide powder as a conductive powder of a thick film resistor and fired to form a resistor, a method for manufacturing it industrially at a low cost, and a paste for forming a thick film resistor using it.;SOLUTION: The iridium oxide powder is used as a conductive powder for a paste for a thick film resistor excellent in electric characteristics, which has an average particle diameter of 30-100 nm, a structure consisting of a single phase of iridium oxide represented by chemical formula: IrO2 and having a half-value width of (110) plane of 0.20-0.40° in its X-ray diffraction, and a chlorine concentration of 0.01-0.4 wt.%.;COPYRIGHT: (C)2008,JPO&INPIT
机译:解决的问题:提供一种氧化铱粉末,其在糊剂中具有优异的分散性,并且当通过使用氧化铱粉末作为厚膜电阻器的导电粉末而获得糊剂时,能够形成具有优异电特性的电阻器。烧成电阻器,以低成本在工业上制造它的方法,以及用它形成厚膜电阻器的糊剂。;解决方案:氧化铱粉末用作厚膜电阻器糊剂的导电粉电特性优异,平均粒径为30-100 nm,由化学式IrO 2 表示的单相氧化铱组成的结构,其半值宽度为( 110)0.20-0.40度的平面; X射线衍射法测定的氯浓度为0.01-0.4 wt。%;版权所有:(C)2008,JPO&INPIT

著录项

  • 公开/公告号JP5098203B2

    专利类型

  • 公开/公告日2012-12-12

    原文格式PDF

  • 申请/专利权人 住友金属鉱山株式会社;

    申请/专利号JP20060104944

  • 发明设计人 前田 俊輝;幕田 富士雄;

    申请日2006-04-06

  • 分类号C01G55/00;H01B1/20;H01C7/00;H01B5/00;

  • 国家 JP

  • 入库时间 2022-08-21 16:56:14

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号