Determination of the structure of the profile parameters using the dispersion function to associate the process parameters to the variance

摘要

PROBLEM TO BE SOLVED: To perform the optical measurement of a structure formed on a semiconductor wafer.;SOLUTION: An optical measurement model of the structure formed on the semiconductor wafer is created. The optical measurement model includes one or more process parameters and dispersion. The dispersion function for making the dispersion associate with at least one of one or more process parameters is obtained. A diffraction signal generated by simulation is created using the optical measurement model, a value of at least one process parameter, and a value of the dispersion. The value of the dispersion is created using the value of at least one process parameter and a dispersion function. A measurement diffraction signal of the structure is acquired. The measurement diffraction signal is compared with a diffraction signal generated by simulation. One or more profile parameters and one or more process parameters related to the structure are determined based on the comparison of the measurement diffraction signal with the diffraction signal generated by simulation.;COPYRIGHT: (C)2009,JPO&INPIT