Manufacturing method for a ZnO crystal or ZnO-based semiconductor compound crystal, and method of manufacturing a ZnO-based light-emitting element

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a ZnO-based light-emitting device containing ZnO crystal having a high activation rate or ZnO-based semiconductor compound crystal.;SOLUTION: An n-type ZnO buffer layer is formed on the Zn polarity surface of a substrate having the Zn polarity surface (a). An n-type ZnO layer is formed on the surface of an n-type ZnO buffer layer (b). An n-type ZnMgO layer is formed on the surface of the n-type ZnO layer (c). A ZnO/ZnMgO quantum well layer with a ZnO layer and a ZnMgO layer laminated therein alternately is formed on the surface of the n-type ZnMgO layer (d). A p-type ZnMgO layer is formed on the ZnO/ZnMgO quantum well layer surface (e). A p-type ZnO layer is formed on the surface of the p-type ZnMgO layer (f). An electrode is formed on the n-type ZnO layer and the p-type ZnO layer (g). In the step (b), a layer is formed under Zn-rich conditions.;COPYRIGHT: (C)2007,JPO&INPIT