By plasma chemical vapor deposition, and ultra-low dielectric material using a hybrid precursor containing silicon with organic functional groups

摘要

Method for depositing on the substrate a low-dielectric layer is provided. In one embodiment, the method comprising the steps of introducing into the chamber the organosilicon compound or compounds, the method comprises a porogen component bound to the silicon atom organosilicon compound or compounds are silicon atoms and by reacting in the presence of the RF power, the method, the organosilicon compound or compounds, depositing on the substrate within the chamber a low dielectric constant layer, substantially porogen components from the low dielectric layer I and a post-processing step of the low dielectric constant layer to be removed. Optionally, it may be introduced into the processing chamber together with the organosilicon compound or compounds, both inert carrier gas or oxidizing gas. Post-treatment process may be an ultraviolet curing of the deposited material. The UV curing process may be used at the same time as the electron beam curing process or heat or sequentially. Low dielectric constant layer has a dielectric constant and the desired good mechanical properties.