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Quartz top plate and plasma nitriding apparatus for a plasma nitriding equipment

机译:用于等离子体氮化设备的石英顶板和等离子体氮化设备

摘要

PROBLEM TO BE SOLVED: To provide a quartz top plate for a plasma nitriding device which allows the formation of a high-quality nitride film by preventing splash of quartz fragments.;SOLUTION: According to an embodiment of the invention, a quartz top plate for a plasma nitriding device is provided. The quartz top plate for a plasma nitriding device is disposed between an antenna for producing plasma in a vacuum reaction chamber of the plasma nitriding device, and a plasma region in the vacuum reaction chamber, and used as a top plate of the vacuum reaction chamber. The quartz top plate for a plasma nitriding device comprises: a main plate part formed from quartz in a plate-like shape; and a dense film forming, of faces of the main plate part, at least a face in contact with an atmosphere of plasma, and composed of a film denser than the quartz. The dense film is formed by film growth on the main plate part.;COPYRIGHT: (C)2012,JPO&INPIT
机译:解决的问题:提供一种用于等离子体氮化装置的石英顶板,该石英顶板通过防止石英碎屑的飞溅而允许形成高质量的氮化物膜;解决方案:根据本发明的一个实施例,一种用于石英的顶板提供了等离子体氮化装置。用于等离子体氮化装置的石英顶板设置在用于在等离子体氮化装置的真空反应室中产生等离子体的天线与在真空反应室中的等离子体区域之间,并且用作真空反应室的顶板。用于等离子体氮化装置的石英顶板包括:板状部分,其由石英形成为板状;以及至少一部分与等离子体气氛接触的面由主板部分的表面形成致密膜,该致密膜由比石英致密的膜构成。致密的薄膜是通过在主板上的薄膜生长而形成的。;版权所有:(C)2012,JPO&INPIT

著录项

  • 公开/公告号JP5254385B2

    专利类型

  • 公开/公告日2013-08-07

    原文格式PDF

  • 申请/专利权人 株式会社東芝;

    申请/专利号JP20110042111

  • 发明设计人 中尾 隆;

    申请日2011-02-28

  • 分类号H01L21/31;H05H1/46;

  • 国家 JP

  • 入库时间 2022-08-21 16:55:39

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