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Multiple port memory having a plurality of trench capacitors which are connected in parallel to the cell (method of manufacturing integrated circuits and the memory cells including memory)
Multiple port memory having a plurality of trench capacitors which are connected in parallel to the cell (method of manufacturing integrated circuits and the memory cells including memory)
In order to access the data bits in each memory cell of the present invention relates more to provide an integrated circuit including a memory having a plurality of ports in each memory cell. [MEANS FOR SOLVING PROBLEMS] Such memories, including including the (102) a plurality of capacitors Each memory cell has been connected to each other as capacitance a single source, an array of memory cells. Is coupled between the bit line and the first capacitor of the first plurality of capacitors, the access transistor and the second (106), the access transistor of the first (104), a second plurality of capacitors is coupled between a bit line and a second capacitor. In the memory cell of each gate of the access transistor of the first, is connected to a first word line, the gate of the access transistor and the second is connected to the second word line. [Selection] Figure Figure 1
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