首页> 外国专利> Multiple port memory having a plurality of trench capacitors which are connected in parallel to the cell (method of manufacturing integrated circuits and the memory cells including memory)

Multiple port memory having a plurality of trench capacitors which are connected in parallel to the cell (method of manufacturing integrated circuits and the memory cells including memory)

机译:具有与单元并联连接的多个沟槽电容器的多端口存储器(制造集成电路的方法以及包括存储器的存储器单元)

摘要

In order to access the data bits in each memory cell of the present invention relates more to provide an integrated circuit including a memory having a plurality of ports in each memory cell. [MEANS FOR SOLVING PROBLEMS] Such memories, including including the (102) a plurality of capacitors Each memory cell has been connected to each other as capacitance a single source, an array of memory cells. Is coupled between the bit line and the first capacitor of the first plurality of capacitors, the access transistor and the second (106), the access transistor of the first (104), a second plurality of capacitors is coupled between a bit line and a second capacitor. In the memory cell of each gate of the access transistor of the first, is connected to a first word line, the gate of the access transistor and the second is connected to the second word line. [Selection] Figure Figure 1
机译:为了访问每个存储单元中的数据位,本发明进一步涉及提供一种集成电路,该集成电路包括在每个存储单元中具有多个端口的存储器。 [解决问题的手段]这种存储器包括包括(102)多个电容器的每个存储器单元已经作为电容彼此连接为单个源,存储器单元的阵列。在位线和第一多个电容器中的第一电容器,存取晶体管和第二电容器(106)之间耦合,在位线和第一电容器(104)中的第二存取电容器之间,第二多个电容器耦合在位线和晶体管之间。第二电容器。在第一存取晶体管的每个栅极的存储单元中,第一栅极连接到第一字线,第二存取晶体管的栅极和第二晶体管的栅极连接到第二字线。 [选择]图图1

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