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Method and apparatus for correlating a gap value on the stability of the meniscus in the process recipe controlled wafer surface by the meniscus

机译:用于通过弯月面使工艺配方控制的晶片表面中的弯月面稳定性上的间隙值与间隙值相关联的方法和设备

摘要

Apparatus monitors a meniscus process that is performed on wafers. Monitoring data for a current process received by a processor indicates characteristics of a gap between the wafer and a process head. The processor is configured to respond to the data that is in the form of orientation monitor signals and to respond to a current recipe. The processor generates meniscus monitor signals for allowing the meniscus to remain stable in further meniscus processing. The monitoring is of current meniscus processing to determine whether a current gap (i) is other than a desired gap of the current recipe, and (ii) corresponds to a stable meniscus. If so, a calibration recipe is identified as specifying the current gap. This calibration recipe specifies parameters for meniscus processing the wafer surface with the current gap. The meniscus processing of the wafer surface is continued using the parameters specified by the identified calibration recipe.
机译:装置监视在晶片上执行的弯月面工艺。处理器接收的当前过程的监视数据指示晶片和过程头之间的间隙的特性。处理器被配置为响应以定向监控器信号形式的数据并响应当前配方。处理器产生弯液面监视信号,以允许弯液面在进一步的弯液面处理中保持稳定。监视当前弯月面处理以确定当前间隙(i)是否不同于当前配方的所需间隙,并且(ii)对应于稳定的弯月面。如果这样,则将校准配方标识为指定当前间隙。该校准配方指定了用于以当前间隙对晶片表面进行弯月面处理的参数。晶片表面的弯月面处理使用已识别的校准配方指定的参数继续进行。

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