首页> 外国专利> Method for fabricating a structure comprising at least one thin layer of amorphous material obtained on a support substrate by epitaxy, and the structure obtained by the method

Method for fabricating a structure comprising at least one thin layer of amorphous material obtained on a support substrate by epitaxy, and the structure obtained by the method

机译:用于制造包括通过外延在支撑基板上获得的至少一层非晶材料薄层的结构的方法以及通过该方法获得的结构

摘要

Way with respect to the surface of step and the aforementioned intermediate structure which form the intermediate structure which has the 1st crystalline layer to which this invention, being the method of producing the structure which at least has the thin layer of 1 layer on the support baseplate, being generally known intermediate structure, amorphous layer, includes point defect, is directly under the aforementioned amorphous layer, and the 2nd crystalline layer which is inside lower part of intermediate structure, from the aforementioned support baseplate, layer of the intermediate structure which step and the point defect which connect the receipt baseplate occur, amorphous layer becomes higher stratum of society of intermediate structure,It regards the method of including with the step which it removes at least. Being the baseplate which as for another purpose of this invention, is on the support baseplate, has at least the thin layer of 1 layer of the amorphous materials, the receipt baseplate, it has central crystalline layer, and amorphous layer, the aforementioned receipt baseplate, in crystalline layer, and amorphous layer, it regards the baseplate which is not point defect of any EOR type.
机译:作为形成具有本发明的具有第一结晶层的中间结构的台阶面和上述中间结构的方法,是在支撑基板上制造至少具有一层薄层的结构的方法。作为通常已知的中间结构,非晶质层包括点缺陷,在上述非晶质层的正下方,并且在中间结构的下部内部的第二结晶层从上述支撑基板开始,中间层的层进行台阶加工。当连接收货基板的点缺陷出现时,非晶层成为中间结构社会的较高阶层,它至少与去除步骤有关。作为本发明的另一个目的的基板,在支承基板上,至少具有1层非晶质材料的薄层,收据基板,具有中央结晶层和非晶质层,上述收据基板在结晶层和非晶层中,它是指不是任何EOR类型的点缺陷的基板。

著录项

  • 公开/公告号JP5133908B2

    专利类型

  • 公开/公告日2013-01-30

    原文格式PDF

  • 申请/专利权人 ソイテック;

    申请/专利号JP20080558811

  • 发明设计人 グザヴィエ エブラス;

    申请日2007-03-13

  • 分类号H01L21/20;H01L21/265;H01L21/02;

  • 国家 JP

  • 入库时间 2022-08-21 16:53:59

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