Production manner of the semiconductor film, production manner of semiconductor equipment and production manner of the electronic equipment, the semiconductor film, the 1st process which forms

摘要

PPROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon carbide film (semiconductor film) improved in characteristics. PSOLUTION: The manufacturing method of the semiconductor film includes: a first process of forming a first silicon carbide film 3 on a silicon film by supplying a carbon source gas onto the first silicon film S1; a second process of forming a second silicon film 5 on the first carbon silicon film; a third process of irradiating the second silicon film with laser beams; and a fourth process of forming a second silicon carbide film by supplying a carbon source gas and a silicon source gas onto the first silicon carbide film after the third process. By this method, the first silicon carbide film 3 can be reformed through the irradiation of the laser beams to improve characteristics of the second silicon film grown on the film. PCOPYRIGHT: (C)2009,JPO&INPIT