首页> 外国专利> Metal copper film and manufacturing method thereof, metal copper pattern and conductor wiring using the same, metal copper bump, heat conduction path, bonding material, and liquid composition

Metal copper film and manufacturing method thereof, metal copper pattern and conductor wiring using the same, metal copper bump, heat conduction path, bonding material, and liquid composition

机译:金属铜膜及其制造方法,金属铜图案和使用其的导体布线,金属铜凸块,导热路径,接合材料和液体组合物

摘要

Provided are a metallic copper film having good substrate adhesion, low volume resistivity, and deep metallicity, and a method for producing a metallic copper film that can be produced by reducing the metallic copper film to a deep part without damaging the substrate. A copper-based particle deposition layer containing both a copper oxide and a metal-like transition metal or alloy, or a transition metal complex containing a metal element is heated with gaseous formic acid and / or formaldehyde heated to 120 ° C. or higher. It is a metal copper film characterized by processing. The copper oxide is preferably cuprous oxide and / or cupric oxide, and the transition metal, alloy, or metal complex is Cu, Pd, Pt, Ni, Ag, Au, and A metal selected from the group consisting of Rh, an alloy containing the metal, or a complex containing the metal element is preferable.
机译:本发明提供具有良好的基板密合性,低的体积电阻率和深的金属感的金属铜膜,以及可以不损害基板地将金属铜膜还原为较深的部分而制造的金属铜膜的制造方法。用加热到120℃或更高的气态甲酸和/或甲醛加热同时包含氧化铜和类金属过渡金属或合金的铜基颗粒沉积层,或包含金属元素的过渡金属络合物。它是一种以加工为特征的金属铜膜。氧化铜优选为氧化亚铜和/或氧化铜,并且过渡金属,合金或金属络合物为Cu,Pd,Pt,Ni,Ag,Au和选自Rh的金属,Rh为合金。金属,或含有金属元素的络合物是优选的。

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