首页> 外国专利> Metal copper film and manufacturing method thereof, metal copper pattern and conductor wiring using the same, metal copper bump, heat conduction path, bonding material, and liquid composition

Metal copper film and manufacturing method thereof, metal copper pattern and conductor wiring using the same, metal copper bump, heat conduction path, bonding material, and liquid composition

机译:金属铜膜及其制造方法,金属铜图案和使用其的导体布线,金属铜凸块,导热路径,接合材料和液体组合物

摘要

Disclosed are: a copper metal film which has good adhesion to a substrate, low volume resistivity, and good deep-part metal properties; and a method for producing a copper metal film, wherein the copper metal film can be produced by reducing a substrate to a deep part thereof without damaging the substrate. Specifically disclosed is a copper metal film obtained by treating a copper-based particle deposition layer containing both copper oxides and a metallic transition metal or alloy, or a transition metal complex containing a metal element, with gaseous formic acid and/or formaldehyde heated to 120°C or higher. The copper oxide is preferably copper (I) oxide and/or copper (II) oxide. The transition metal, alloy or metal complex are preferably a metal selected from the group consisting of Cu, Pd, Pt, Ni, Ag, Au and Rh, an alloy containing the metal, or a complex containing the metal element, respectively.
机译:本发明公开了一种铜金属膜,该铜金属膜对基板的密合性良好,体积电阻率低,且深部金属特性良好。本发明提供一种铜金属膜的制造方法,其特征在于,可以在不损伤基板的情况下将基板缩小至较深的部分来制造铜金属膜。具体地公开了一种铜金属膜,该铜金属膜通过将包含铜氧化物和金属过渡金属或合金的铜基颗粒沉积层或包含金属元素的过渡金属络合物用加热至120的气态甲酸和/或甲醛处理而获得。 °C或更高。氧化铜优选是氧化铜(I)和/或氧化铜(II)。过渡金属,合金或金属络合物优选是分别选自Cu,Pd,Pt,Ni,Ag,Au和Rh的金属,包含金属的合金或包含金属元素的络合物。

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