首页> 外国专利> Apparatus For Generating Hollow Cathode Plasma And Apparatus For Treating Large Area Substrate Using Hollow Cathode Plasma

Apparatus For Generating Hollow Cathode Plasma And Apparatus For Treating Large Area Substrate Using Hollow Cathode Plasma

机译:产生空心阴极等离子体的设备和利用空心阴极等离子体处理大面积基板的设备

摘要

A method of generating hollow cathode plasma and a method of treating a large area substrate using the hollow cathode plasma are disclosed. In the methods, the hollow cathode plasma is generated by a gas introduced between a hollow cathode in which a plurality of lower grooves where plasma is generated is defined in a bottom surface thereof and a baffle in which a plurality of injection holes is defined. A substrate disposed on a substrate support member is treated using the hollow cathode plasma passing through the injection holes. The uniform plasma having high density can be generated by hollow cathode effect due to the hollow cathode having the lower grooves and the injection holes of the baffle. Also, since the substrate can be treated using a hydrogen gas and a nitrogen gas in an ashing process, a damage of a low dielectric constant dielectric can be minimized.
机译:公开了一种产生空心阴极等离子体的方法和一种使用空心阴极等离子体处理大面积基板的方法。在这些方法中,中空阴极等离子体由引入在中空阴极中的气体产生,所述中空阴极在其底表面中限定了多个产生等离子体的下凹槽,所述中空阴极限定了多个注入孔。使用穿过注入孔的空心阴极等离子体处理设置在基板支撑构件上的基板。由于空心阴极具有挡板的下槽和注入孔,所以通过空心阴极效应可以产生具有高密度的均匀等离子体。另外,由于可以在灰化工艺中使用氢气和氮气处理基板,因此可以使低介电常数电介质的损坏最小化。

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