METHOD OF MAKING A MOSFET HAVING SELF-ALIGNED SILICIDED SCHOTTKY BODY TIE INCLUDING INTENTIONAL PULL-DOWN OF AN STI EXPOSING SIDEWALLS OF A DIFFUSION REGION

摘要

A self-aligned transistor device includes: a source region and drain regions disposed on an oxide layer; a channel with a diffusion region formed between the drain and source regions; a silicide layer over a top surface of the source and drain regions, extending into the diffusion region; and a recess formed on each end of the device to expose sidewalls of the device to a free surface by performing shallow trench isolation on the oxide layer of the device that extends past the silicide layer.