首页> 外国专利> SPIN-TORQUE OSCILLATOR (STO) WITH ANTIPARALLEL-COUPLED FREE FERROMAGNETIC LAYERS AND MAGNETIC DAMPING

SPIN-TORQUE OSCILLATOR (STO) WITH ANTIPARALLEL-COUPLED FREE FERROMAGNETIC LAYERS AND MAGNETIC DAMPING

机译:带有反平行耦合自由铁磁层和磁阻尼的自旋转矩振荡器(STO)

摘要

A spin-torque oscillator with antiferromagnetically-coupled free layers has at least one of the free layers with increased magnetic damping. The Gilbert magnetic damping parameter (α) is at least 0.05. The damped free layer may contain as a dopant one or more damping elements selected from the group consisting of Pt, Pd and the 15 lanthanide elements. The free layer damping may also be increased by a damping layer adjacent the free layer. One type of damping layer may be an antiferromagnetic material, like a Mn alloy. As a modification to the antiferromagnetic damping layer, a bilayer damping layer may be formed of the antiferromagnetic layer and a nonmagnetic metal electrically conductive separation layer between the free layer and the antiferromagnetic layer. Another type of damping layer may be one formed of one or more of the elements selected from Pt, Pd and the lanthanides.
机译:具有反铁磁耦合的自由层的自旋转矩振荡器具有增加了磁阻尼的自由层中的至少一个。吉尔伯特磁阻尼参数(α)至少为0.05。阻尼的自由层可包含一种或多种选自Pt,Pd和15种镧系元素的阻尼元素作为掺杂剂。自由层的阻尼也可以通过与自由层相邻的阻尼层来增加。一种类型的阻尼层可以是反铁磁材料,例如Mn合金。作为反铁磁阻尼层的变型,可以在自由层和反铁磁层之间由反铁磁层和非磁性金属导电隔离层形成双层阻尼层。另一种类型的阻尼层可以是由选自Pt,Pd和镧系元素中的一种或多种元素形成的阻尼层。

著录项

  • 公开/公告号US2013222949A1

    专利类型

  • 公开/公告日2013-08-29

    原文格式PDF

  • 申请/专利权人 HGST NETHERLANDS B.V.;

    申请/专利号US201313858004

  • 申请日2013-04-06

  • 分类号G11B5/39;H03B28/00;

  • 国家 US

  • 入库时间 2022-08-21 16:51:08

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