首页> 外国专利> DECODING SCHEME FOR BIPOLAR-BASED DIODE THREE-DIMENSIONAL MEMORY REQUIRING BIPOLAR PROGRAMMING

DECODING SCHEME FOR BIPOLAR-BASED DIODE THREE-DIMENSIONAL MEMORY REQUIRING BIPOLAR PROGRAMMING

机译:需要双线性规划的基于双线性的二维三维存储器的解码方案

摘要

A system and method for operating a bipolar memory cell array including a bidirectional access diode. The system includes a column voltage. The column voltage switch includes column voltages and an output electrically coupled to the bidirectional access diode. The column voltages include at least one write-one column voltage and at least one write-zero column voltage. The system also includes a row voltage switch. The row voltage switch includes row voltages and an output electrically coupled to the bidirectional access diode. The row voltages include at least one write-one row voltage and at least one write-zero row voltage. The system further includes a column decoder and a row decoder electrically coupled to a select line of the column voltage switch and row voltage switch, respectively. The system includes a write driver electrically coupled to the select lines of the row and column switches.
机译:一种用于操作包括双向存取二极管的双极存储单元阵列的系统和方法。该系统包括列电压。列电压开关包括列电压和电耦合至双向访问二极管的输出。列电压包括至少一个写一列电压和至少一个写零列电压。该系统还包括行电压开关。行电压开关包括行电压和电耦合至双向访问二极管的输出。行电压包括至少一个写一行电压和至少一个写零行电压。该系统还包括分别电耦合到列电压开关和行电压开关的选择线的列解码器和行解码器。该系统包括电连接到行和列开关的选择线的写驱动器。

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